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HomeHuaHua Rawehake UtuNga Transistors - FET, MOSFET - KotahiIRLML2803GTRPBF
IRLML2803GTRPBF Image
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IRLML2803GTRPBF - Infineon Technologies

Kaihanga Tau Wae
IRLML2803GTRPBF
Kaihanga
Infineon Technologies
Allelco Tau Wae
32D-IRLML2803GTRPBF
Tauira ECAD
Nga waahanga Whakaahuatanga
MOSFET N-CH 30V 1.2A SOT-23-3
Whakaahuatanga Taipitopito
Paera
Pepa Raraunga
IRLML2803GPbF.pdf
RoHs Tūnga
Whakahaerehia te kore utu / RoHS
I roto i te taonga: 336930

Ko nga mara e hiahiatia ana e tohuhia ana e te Asterisk (*)
Tena koa tukuna rfq, ka whakahoki wawe matou.

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Ngā whakaaturanga

IRLML2803GTRPBF Whakaritenga Hangarau
Nga Hangarau Hangarau Infineon Technologies - IRLML2803GTRPBF, nga tohu, nga taatai me nga waahanga me nga taapiri rite ki Infineon Technologies - IRLML2803GTRPBF

Huanga hua Uara huanga  
Kaihanga Infineon Technologies  
Putanga - Whakamātau 85pF @ 25V  
Tuhinga o mua - Breakdown Micro3™/SOT-23  
Vgs (th) (Max) @ Id 250 mOhm @ 910mA, 10V  
Vgs (Max) 4.5V, 10V  
Hangarau MOSFET (Metal Oxide)  
Raupapa HEXFET®  
RoHS Tūnga Cut Tape (CT)  
Runa I (Max) @ Id, Vgs 1.2A (Ta)  
Ko te poari TO-236-3, SC-59, SOT-23-3  
Ētahi Ingoa IRLML2803GTRPBFCT  
Tae Mahi -55°C ~ 150°C (TJ)  
Momo Tae Surface Mount  
Huanga hua Uara huanga  
Taumata Whakaaro Moe (MSL) 1 (Unlimited)  
Te Tae Kaituku Taeke 10 Weeks  
Waehanga Kaihanga IRLML2803GTRPBF  
Whakauru Whakauru (Ciss) (Max) @ Vds 5nC @ 10V  
Momo IGBT ±20V  
Puta Whakatau (Qg) (Max) @ Vgs 1V @ 250µA  
FET Pānga N-Channel  
Whakaahua nui N-Channel 30V 1.2A (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23  
Tuku ki te Pūtake Pūtake (Vdss) -  
Whakaahuatanga MOSFET N-CH 30V 1.2A SOT-23-3  
I teie nei - Ngaa Toa (Id) @ 25 ° C 30V  
Ratonga Capacitance 540mW (Ta)  

Waahanga me nga whakaritenga rite

Ko nga waahanga e toru kei te taha matau he rite nga whakaritenga ki Infineon Technologies IRLML2803GTRPBF.

Huanga hua IRLML2803GTRPBF IRLML2803TRPBF IRLML2803TR IRLML2803TRPBF-1
Tau Wae IRLML2803GTRPBF IRLML2803TRPBF IRLML2803TR IRLML2803TRPBF-1
Kaihanga Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
FET Pānga N-Channel - - -
Te Tae Kaituku Taeke 10 Weeks - - -
Tuhinga o mua - Breakdown Micro3™/SOT-23 - - -
Raupapa HEXFET® HEXFET® - HEXFET®
Ētahi Ingoa IRLML2803GTRPBFCT - - -
Whakaahua nui N-Channel 30V 1.2A (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23 - - -
Waehanga Kaihanga IRLML2803GTRPBF - - -
Ratonga Capacitance 540mW (Ta) - - -
Taumata Whakaaro Moe (MSL) 1 (Unlimited) - - -
Runa I (Max) @ Id, Vgs 1.2A (Ta) 250mOhm @ 910mA, 10V 250mOhm @ 910mA, 10V 250mOhm @ 910mA, 10V
RoHS Tūnga Cut Tape (CT) - - -
Tuku ki te Pūtake Pūtake (Vdss) - 30 V 30 V 30 V
Momo IGBT ±20V - - -
Puta Whakatau (Qg) (Max) @ Vgs 1V @ 250µA 5 nC @ 10 V 5 nC @ 10 V 5 nC @ 10 V
Tae Mahi -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Vgs (th) (Max) @ Id 250 mOhm @ 910mA, 10V 1V @ 250µA 1V @ 250µA 1V @ 250µA
Putanga - Whakamātau 85pF @ 25V - - -
Whakaahuatanga MOSFET N-CH 30V 1.2A SOT-23-3 - - -
Whakauru Whakauru (Ciss) (Max) @ Vds 5nC @ 10V 85 pF @ 25 V 85 pF @ 25 V 85 pF @ 25 V
Ko te poari TO-236-3, SC-59, SOT-23-3 - - -
Hangarau MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
I teie nei - Ngaa Toa (Id) @ 25 ° C 30V 1.2A (Ta) 1.2A (Ta) 1.2A (Ta)
Vgs (Max) 4.5V, 10V ±20V - ±20V
Momo Tae Surface Mount Surface Mount Surface Mount Surface Mount

IRLML2803GTRPBF Datasheet PDF

Tangohia a IRLML2803GTRPBF PDF Datasheets me Infineon Technologies tuhinga mo IRLML2803GTRPBF - Infineon Technologies.

Ngā Rauemi
IRLML2803GPbF.pdf

Tuhinga

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Takiwā Whenua Te wa arorau (ra)
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    +00852 9146 4856

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IRLML2803GTRPBF Image

IRLML2803GTRPBF

Infineon Technologies
32D-IRLML2803GTRPBF

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