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HomeHuaHua Rawehake UtuNga Transistors - FET, MOSFET - KotahiSI4668DY-T1-GE3
SI4668DY-T1-GE3 Image
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Tikanga utu

SI4668DY-T1-GE3 - Vishay Siliconix

Kaihanga Tau Wae
SI4668DY-T1-GE3
Kaihanga
Vishay / Siliconix
Allelco Tau Wae
32D-SI4668DY-T1-GE3
Tauira ECAD
Nga waahanga Whakaahuatanga
MOSFET N-CH 25V 16.2A 8SO
Paera
8-SOIC (0.154", 3.90mm Width)
Pepa Raraunga
SI4668DY.pdf
RoHs Tūnga
Ta matou Tiwhikete
I roto i te taonga: 5070

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Ngā whakaaturanga

SI4668DY-T1-GE3 Whakaritenga Hangarau
Nga Hangarau Hangarau Vishay Siliconix - SI4668DY-T1-GE3, nga tohu, nga taatai me nga waahanga me nga taapiri rite ki Vishay Siliconix - SI4668DY-T1-GE3

Huanga hua Uara huanga  
Kaihanga Vishay / Siliconix  
Vgs (th) (Max) @ Id 2.6V @ 250µA  
Vgs (Max) ±16V  
Hangarau MOSFET (Metal Oxide)  
Pūrere Pūrere Whakarato 8-SOIC  
Raupapa TrenchFET®  
Runa I (Max) @ Id, Vgs 10.5mOhm @ 15A, 10V  
Whakaaetanga Mana (Max) 2.5W (Ta), 5W (Tc)  
Paa / Case 8-SOIC (0.154", 3.90mm Width)  
Pūhera Tape & Reel (TR)  
Huanga hua Uara huanga  
Tae Mahi -55°C ~ 150°C (TJ)  
Momo Tae Surface Mount  
Whakauru Whakauru (Ciss) (Max) @ Vds 1654 pF @ 15 V  
Puta Whakatau (Qg) (Max) @ Vgs 42 nC @ 10 V  
Momo FET N-Channel  
FET Pānga -  
Kohikohi Whakaeke (Max Rds On, Min Rds On) 4.5V, 10V  
Tuku ki te Pūtake Pūtake (Vdss) 25 V  
I teie nei - Ngaa Toa (Id) @ 25 ° C 16.2A (Tc)  
Tau hua hua SI4668  

Te Tauira Taiao me te Kaweake

TOHU WHAKAAHUATANGA
RoHs Tūnga
Taumata Maha Kore (MSL) 1 (Unlimited)
Tutuki te mana
ECCN EAR99
HTSUS

Waahanga me nga whakaritenga rite

Ko nga waahanga e toru kei te taha matau he rite nga whakaritenga ki Vishay Siliconix SI4668DY-T1-GE3.

Huanga hua SI4668DY-T1-GE3 SI4660DY-T1-GE3 SI4654DY-T1-GE3 SI4660DY-T1-E3
Tau Wae SI4668DY-T1-GE3 SI4660DY-T1-GE3 SI4654DY-T1-GE3 SI4660DY-T1-E3
Kaihanga Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Tau hua hua SI4668 SI4660 SI4654 SI4660
Vgs (th) (Max) @ Id 2.6V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.2V @ 250µA
Tae Mahi -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Puta Whakatau (Qg) (Max) @ Vgs 42 nC @ 10 V 45 nC @ 10 V 100 nC @ 10 V 45 nC @ 10 V
Tuku ki te Pūtake Pūtake (Vdss) 25 V 25 V 25 V 25 V
Paa / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Raupapa TrenchFET® TrenchFET® TrenchFET® TrenchFET®
FET Pānga - - - -
Whakaaetanga Mana (Max) 2.5W (Ta), 5W (Tc) 3.1W (Ta), 5.6W (Tc) 2.5W (Ta), 5.9W (Tc) 3.1W (Ta), 5.6W (Tc)
Pūhera Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Whakauru Whakauru (Ciss) (Max) @ Vds 1654 pF @ 15 V 2410 pF @ 15 V 3770 pF @ 15 V 2410 pF @ 15 V
Pūrere Pūrere Whakarato 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Momo FET N-Channel N-Channel N-Channel N-Channel
Runa I (Max) @ Id, Vgs 10.5mOhm @ 15A, 10V 5.8mOhm @ 15A, 10V 4mOhm @ 15A, 10V 5.8mOhm @ 15A, 10V
I teie nei - Ngaa Toa (Id) @ 25 ° C 16.2A (Tc) 23.1A (Tc) 28.6A (Tc) 23.1A (Tc)
Kohikohi Whakaeke (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Vgs (Max) ±16V ±16V ±16V ±16V
Momo Tae Surface Mount Surface Mount Surface Mount Surface Mount
Hangarau MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

SI4668DY-T1-GE3 Datasheet PDF

Tangohia a SI4668DY-T1-GE3 PDF Datasheets me Vishay Siliconix tuhinga mo SI4668DY-T1-GE3 - Vishay Siliconix.

Raraunga
SI4668DY.pdf

Tuhinga

Te wa tuku

Ka taea te tuku i nga taonga-a-roto i roto i nga haora 24.Ko etahi waahanga ka whakaritea mo te tuku i roto i nga ra 1-2 mai i te ra i tae mai nga taonga katoa ki ta maatau whare putunga.Me nga kaipuke a Allelco i te ra kotahi i te 17:00, haunga te Rātapu.Ina tukuna nga taonga, ko te wa tuku e kiia ana ko te tikanga tuku me te haerenga tuku.Ko te ripanga i raro nei e whakaatu ana ko te waa arorau mo etahi whenua noa.

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Takiwā Whenua Te wa arorau (ra)
Amerika United States 5
Brazil 7
Europeropi Tāpā 5
United Kingdom 4
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Tautoko utu

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    +00852 9146 4856

Tiwhikete me nga Mema

Tirohia atu
SI4668DY-T1-GE3 Image

SI4668DY-T1-GE3

Vishay Siliconix
32D-SI4668DY-T1-GE3

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